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CD-02-05-C-54

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THERM PAD 2.106" X 2.106"

RV8C010UNHZGG2CR

RV8C010UNHZGG2CR

MOSFET N-CH 20V 1A DFN1010-3W

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RV8C010UNHZGG2CR

RV8C010UNHZGG2CR

Image is for reference, please contact us to get the real picture

Part No :

RV8C010UNHZGG2CR

Manufacturer
ROHM Semiconductor
Description
MOSFET N-CH 20V 1A DFN1010-3W
Catalog
Transistors - FETs, MOSFETs - Single
Availability
843784 pieces
Shipped from
HK warehouse
Expected Shipping Date
Nov 23 - Nov 27 2024
Type Description
Series:Automotive, AEC-Q101
Package:Tape & Reel (TR)Cut Tape (CT)
Part Status:Active
FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):20 V
Current - Continuous Drain (Id) @ 25°C:1A (Ta)
Drive Voltage (Max Rds On, Min Rds On):-
Rds On (Max) @ Id, Vgs:470mOhm @ 500mA, 4.5V
Vgs(th) (Max) @ Id:1V @ 1mA
Gate Charge (Qg) (Max) @ Vgs:-
Vgs (Max):±8V
Input Capacitance (Ciss) (Max) @ Vds:40 pF @ 10 V
FET Feature:-
Power Dissipation (Max):1W
Operating Temperature:150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:DFN1010-3W
Package / Case:3-XFDFN
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