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XPN12006NC,L1XHQ

XPN12006NC,L1XHQ

MOSFET N-CH 60V 20A 8TSON

XPN12006NC,L1XHQ

XPN12006NC,L1XHQ

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Part No :

XPN12006NC,L1XHQ

Manufacturer
Toshiba Electronic Devices and Storage Corporation
Description
MOSFET N-CH 60V 20A 8TSON
Catalog
Transistors - FETs, MOSFETs - Single
Availability
19978 pieces
Shipped from
HK warehouse
Expected Shipping Date
Nov 13 - Nov 17 2024
Type Description
Series:Automotive, AEC-Q101
Package:Tape & Reel (TR)Cut Tape (CT)
Part Status:Active
FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):60 V
Current - Continuous Drain (Id) @ 25°C:20A
Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
Rds On (Max) @ Id, Vgs:12mOhm @ 10A, 10V
Vgs(th) (Max) @ Id:2.5V @ 0.2mA
Gate Charge (Qg) (Max) @ Vgs:23 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:1100 pF @ 10 V
FET Feature:-
Power Dissipation (Max):65W (Tc)
Operating Temperature:-55°C ~ 175°C
Mounting Type:Surface Mount
Supplier Device Package:8-TSON Advance-WF (3.1x3.1)
Package / Case:8-PowerVDFN
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