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BMS3003-1E

BMS3003-1E

BUFFER/INVERTER BASED MOSFET DRI

BMS3003-1E

BMS3003-1E

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Part No :

BMS3003-1E

Manufacturer
Rochester Electronics
Description
BUFFER/INVERTER BASED MOSFET DRI
Catalog
Transistors - FETs, MOSFETs - Single
Availability
443744 pieces
Shipped from
HK warehouse
Expected Shipping Date
Dec 29 - Jan 02 2024
PDF
BMS3003-1E PDF
Type Description
Series:-
Package:Bulk
Part Status:Active
FET Type:P-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):60 V
Current - Continuous Drain (Id) @ 25°C:78A (Ta)
Drive Voltage (Max Rds On, Min Rds On):4V, 10V
Rds On (Max) @ Id, Vgs:6.5mOhm @ 39A, 10V
Vgs(th) (Max) @ Id:-
Gate Charge (Qg) (Max) @ Vgs:285 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:13.2 pF @ 20 V
FET Feature:-
Power Dissipation (Max):2W (Ta), 40W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:TO-220F-3SG
Package / Case:TO-220-3 Full Pack
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