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IPD60R600E6ATMA1

IPD60R600E6ATMA1

COOLMOS N-CHANNEL POWER MOSFET

IPD60R600E6ATMA1

IPD60R600E6ATMA1

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Part No :

IPD60R600E6ATMA1

Manufacturer
Rochester Electronics
Description
COOLMOS N-CHANNEL POWER MOSFET
Catalog
Transistors - FETs, MOSFETs - Single
Availability
18488 pieces
Shipped from
HK warehouse
Expected Shipping Date
Dec 27 - Dec 31 2024
PDF
IPD60R600E6ATMA1 PDF
Type Description
Series:CoolMOS™ E6
Package:Bulk
Part Status:Active
FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):600 V
Current - Continuous Drain (Id) @ 25°C:7.3A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:600mOhm @ 2.4A, 10V
Vgs(th) (Max) @ Id:3.5V @ 200µA
Gate Charge (Qg) (Max) @ Vgs:20.5 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:440 pF @ 100 V
FET Feature:-
Power Dissipation (Max):63W (Tc)
Operating Temperature:-
Mounting Type:Surface Mount
Supplier Device Package:TO-252
Package / Case:TO-252-3, DPak (2 Leads + Tab), SC-63
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