MOSFET N-CH 600V 3.7A IPAK
Type | Description |
---|---|
Series: | MDmesh™ II Plus |
Package: | Tube |
Part Status: | Active |
FET Type: | N-Channel |
Technology: | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): | 600 V |
Current - Continuous Drain (Id) @ 25°C: | 3.7A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Rds On (Max) @ Id, Vgs: | 1.4Ohm @ 1.85A, 10V |
Vgs(th) (Max) @ Id: | 4V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: | 4.5 nC @ 10 V |
Vgs (Max): | ±25V |
Input Capacitance (Ciss) (Max) @ Vds: | 165 pF @ 100 V |
FET Feature: | - |
Power Dissipation (Max): | 45W (Tc) |
Operating Temperature: | 150°C (TJ) |
Mounting Type: | Through Hole |
Supplier Device Package: | IPAK (TO-251) |
Package / Case: | TO-251-3, IPak, Short Leads |
UNIT2, 22/F., RICHMOND COMM. BLDG., 109 ARGYLE STREET, MONGKOK, KOWLOON, HK
Office Hours : Mon-Fri, 9:00-18:30(GMT+8)
Phone: 00852-52612101
SPP80N06S209Rochester Electronics |
N-CHANNEL POWER MOSFET |
|
RM78N100LDRectron USA |
MOSFET N-CH 100V 78A TO252-2 |
|
IRFB7434PBFRochester Electronics |
IRFB7434 - 12V-300V N-CHANNEL PO |
|
FQP5N80Rochester Electronics |
MOSFET N-CH 800V 4.8A TO220-3 |
|
SSM3J130TU,LFToshiba Electronic Devices and Storage Corporation |
MOSFET P-CH 20V 4.4A UFM |
|
SI1012X-T1-GE3Vishay / Siliconix |
MOSFET N-CH 20V 500MA SC89-3 |
|
IRLM120ATFSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 100V 2.3A SOT223-4 |
|
APT20M22LVRGRoving Networks / Microchip Technology |
MOSFET N-CH 200V 100A TO264 |
|
SPA07N60CFDXKSA1Rochester Electronics |
POWER FIELD-EFFECT TRANSISTOR, 6 |
|
IPDH6N03LAGRochester Electronics |
PFET, 50A I(D), 25V, 0.006OHM, 1 |
|
SQ4401EY-T1_GE3Vishay / Siliconix |
MOSFET P-CH 40V 17.3A 8SO |
|
APT51F50JRoving Networks / Microchip Technology |
MOSFET N-CH 500V 51A ISOTOP |
|
DMP510DL-7Zetex Semiconductors (Diodes Inc.) |
MOSFET P-CH 50V 180MA SOT23 |