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BSC0803LSATMA1

BSC0803LSATMA1

MOSFET N-CH 100V 10A/44A TDSON-6

BSC0803LSATMA1

BSC0803LSATMA1

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Part No :

BSC0803LSATMA1

Manufacturer
IR (Infineon Technologies)
Description
MOSFET N-CH 100V 10A/44A TDSON-6
Catalog
Transistors - FETs, MOSFETs - Single
Availability
19586 pieces
Shipped from
HK warehouse
Expected Shipping Date
Dec 29 - Jan 02 2024
Type Description
Series:OptiMOS™ 5
Package:Tape & Reel (TR)Cut Tape (CT)
Part Status:Active
FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):100 V
Current - Continuous Drain (Id) @ 25°C:10A (Ta), 44A (Tc)
Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
Rds On (Max) @ Id, Vgs:14.6mOhm @ 22A, 10V
Vgs(th) (Max) @ Id:2.3V @ 23µA
Gate Charge (Qg) (Max) @ Vgs:10 nC @ 4.5 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:1300 pF @ 50 V
FET Feature:-
Power Dissipation (Max):2.5W (Ta), 52W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:PG-TDSON-8-6
Package / Case:8-PowerTDFN
BSC0803LSATMA1 is available at GangBo-ic.com, Please review product page below for detailed information, including BSC0803LSATMA1 price, datasheets, in-stock availability, technical difficulties. Quickly Enter the access of compare list to find replaceable electronic parts. Want to gain comprehensive data for BSC0803LSATMA1 to optimize the supply chain (include cross references, lifecycle, parametric, counterfeit risk, obsolescence management forecasts), please contact to our Tech-supports team.

GANG BO INDUSTRIAL CO., LIMITED [Hongkong]

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