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NTZS3151PT1G

NTZS3151PT1G

MOSFET P-CH 20V 860MA SOT563

NTZS3151PT1G

NTZS3151PT1G

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Part No :

NTZS3151PT1G

Manufacturer
Sanyo Semiconductor/ON Semiconductor
Description
MOSFET P-CH 20V 860MA SOT563
Catalog
Transistors - FETs, MOSFETs - Single
Availability
44115 pieces
Shipped from
HK warehouse
Expected Shipping Date
Dec 19 - Dec 23 2024
PDF
NTZS3151PT1G PDF
Type Description
Series:-
Package:Tape & Reel (TR)Cut Tape (CT)
Part Status:Active
FET Type:P-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):20 V
Current - Continuous Drain (Id) @ 25°C:860mA (Ta)
Drive Voltage (Max Rds On, Min Rds On):1.8V, 4.5V
Rds On (Max) @ Id, Vgs:150mOhm @ 950mA, 4.5V
Vgs(th) (Max) @ Id:1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:5.6 nC @ 4.5 V
Vgs (Max):±8V
Input Capacitance (Ciss) (Max) @ Vds:458 pF @ 16 V
FET Feature:-
Power Dissipation (Max):170mW (Ta)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:SOT-563
Package / Case:SOT-563, SOT-666
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