MOSFET N-CH 600V 31A TO247-3
Type | Description |
---|---|
Series: | CoolMOS™ P7 |
Package: | Tube |
Part Status: | Active |
FET Type: | N-Channel |
Technology: | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): | 600 V |
Current - Continuous Drain (Id) @ 25°C: | 31A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Rds On (Max) @ Id, Vgs: | 99mOhm @ 10.5A, 10V |
Vgs(th) (Max) @ Id: | 4V @ 530µA |
Gate Charge (Qg) (Max) @ Vgs: | 45 nC @ 10 V |
Vgs (Max): | ±20V |
Input Capacitance (Ciss) (Max) @ Vds: | 1952 pF @ 400 V |
FET Feature: | - |
Power Dissipation (Max): | 117W (Tc) |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Mounting Type: | Through Hole |
Supplier Device Package: | PG-TO247-3 |
Package / Case: | TO-247-3 |
UNIT2, 22/F., RICHMOND COMM. BLDG., 109 ARGYLE STREET, MONGKOK, KOWLOON, HK
Office Hours : Mon-Fri, 9:00-18:30(GMT+8)
Phone: 00852-52612101
NTZS3151PT1GSanyo Semiconductor/ON Semiconductor |
MOSFET P-CH 20V 860MA SOT563 |
|
FDP120AN15A0Rochester Electronics |
MOSFET N-CH 150V 2.8A/14A TO220 |
|
AON2408Alpha and Omega Semiconductor, Inc. |
MOSFET N CH 20V 8A DFN 2x2B |
|
TK14G65W,RQToshiba Electronic Devices and Storage Corporation |
MOSFET N-CH 650V 13.7A D2PAK |
|
APT30F50SRoving Networks / Microchip Technology |
MOSFET N-CH 500V 30A D3PAK |
|
SI2323DS-T1-E3Vishay / Siliconix |
MOSFET P-CH 20V 3.7A SOT23-3 |
|
IXFX140N25TWickmann / Littelfuse |
MOSFET N-CH 250V 140A PLUS247-3 |
|
DMTH10H025SK3-13Zetex Semiconductors (Diodes Inc.) |
MOSFET N-CH 100V 46.3A TO252 T&R |
|
SIHF6N65E-GE3Vishay / Siliconix |
MOSFET N-CH 650V 7A TO220 |
|
APT53F80JRoving Networks / Microchip Technology |
MOSFET N-CH 800V 57A ISOTOP |
|
SIHG47N60AE-GE3Vishay / Siliconix |
MOSFET N-CH 600V 43A TO247AC |
|
AOT5N100Alpha and Omega Semiconductor, Inc. |
MOSFET N-CH 1000V 4A TO220 |
|
FDMC8010DCSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 30V 37A 8PQFN |