MOSFET N-CH 1000V 7A TO263
IC AMP COMP 8UMAX
RELAY AUTO SPDT 45A 24V
Type | Description |
---|---|
Series: | HiPerFET™, PolarP2™ |
Package: | Tube |
Part Status: | Active |
FET Type: | N-Channel |
Technology: | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): | 1000 V |
Current - Continuous Drain (Id) @ 25°C: | 7A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Rds On (Max) @ Id, Vgs: | 1.9Ohm @ 3.5A, 10V |
Vgs(th) (Max) @ Id: | 6V @ 1mA |
Gate Charge (Qg) (Max) @ Vgs: | 47 nC @ 10 V |
Vgs (Max): | ±30V |
Input Capacitance (Ciss) (Max) @ Vds: | 2590 pF @ 25 V |
FET Feature: | - |
Power Dissipation (Max): | 300W (Tc) |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Mounting Type: | Surface Mount |
Supplier Device Package: | TO-263 (IXFA) |
Package / Case: | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
UNIT2, 22/F., RICHMOND COMM. BLDG., 109 ARGYLE STREET, MONGKOK, KOWLOON, HK
Office Hours : Mon-Fri, 9:00-18:30(GMT+8)
Phone: 00852-52612101
BSP321PH6327XTSA1IR (Infineon Technologies) |
MOSFET P-CH 100V 980MA SOT223-4 |
|
TN2106K1-GRoving Networks / Microchip Technology |
MOSFET N-CH 60V 280MA TO236AB |
|
2SK1432Rochester Electronics |
N-CHANNEL POWER MOSFET |
|
IRFP048PBFVishay / Siliconix |
MOSFET N-CH 60V 70A TO247-3 |
|
FDD3690Sanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 100V 22A DPAK |
|
RM90N40DFRectron USA |
MOSFET N-CHANNEL 40V 90A 8DFN |
|
IPW60R099P7XKSA1IR (Infineon Technologies) |
MOSFET N-CH 600V 31A TO247-3 |
|
NTZS3151PT1GSanyo Semiconductor/ON Semiconductor |
MOSFET P-CH 20V 860MA SOT563 |
|
FDP120AN15A0Rochester Electronics |
MOSFET N-CH 150V 2.8A/14A TO220 |
|
AON2408Alpha and Omega Semiconductor, Inc. |
MOSFET N CH 20V 8A DFN 2x2B |
|
TK14G65W,RQToshiba Electronic Devices and Storage Corporation |
MOSFET N-CH 650V 13.7A D2PAK |
|
APT30F50SRoving Networks / Microchip Technology |
MOSFET N-CH 500V 30A D3PAK |
|
SI2323DS-T1-E3Vishay / Siliconix |
MOSFET P-CH 20V 3.7A SOT23-3 |