MOSFET N-CH 60V 6A 8SO
Type | Description |
---|---|
Series: | TrenchFET® |
Package: | Tape & Reel (TR)Cut Tape (CT) |
Part Status: | Active |
FET Type: | N-Channel |
Technology: | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): | 60 V |
Current - Continuous Drain (Id) @ 25°C: | 6A (Ta) |
Drive Voltage (Max Rds On, Min Rds On): | 4.5V, 10V |
Rds On (Max) @ Id, Vgs: | 22mOhm @ 6A, 10V |
Vgs(th) (Max) @ Id: | 3V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: | 27 nC @ 10 V |
Vgs (Max): | ±20V |
Input Capacitance (Ciss) (Max) @ Vds: | - |
FET Feature: | - |
Power Dissipation (Max): | 1.7W (Ta) |
Operating Temperature: | -55°C ~ 175°C (TJ) |
Mounting Type: | Surface Mount |
Supplier Device Package: | 8-SO |
Package / Case: | 8-SOIC (0.154", 3.90mm Width) |
UNIT2, 22/F., RICHMOND COMM. BLDG., 109 ARGYLE STREET, MONGKOK, KOWLOON, HK
Office Hours : Mon-Fri, 9:00-18:30(GMT+8)
Phone: 00852-52612101
BFL4007Rochester Electronics |
MOSFET N-CH 600V 14/8.7A TO220FI |
|
STL90N6F7STMicroelectronics |
MOSFET N-CH 60V 90A POWERFLAT |
|
STD12N60M2STMicroelectronics |
MOSFET N-CHANNEL 600V 9A DPAK |
|
SI9433BDY-T1-E3Vishay / Siliconix |
MOSFET P-CH 20V 4.5A 8SO |
|
FQB9P25TMSanyo Semiconductor/ON Semiconductor |
MOSFET P-CH 250V 9.4A D2PAK |
|
IRF3007STRLPBFIR (Infineon Technologies) |
MOSFET N CH 75V 62A D2PAK |
|
PSMN8R5-60YS,115Nexperia |
MOSFET N-CH 60V 76A LFPAK56 |
|
DMP10H4D2S-7Zetex Semiconductors (Diodes Inc.) |
MOSFET P-CH 100V 270MA SOT23 |
|
AUIRFZ44VZSRochester Electronics |
MOSFET N-CH 60V 57A D2PAK |
|
SSM6K407TU,LFToshiba Electronic Devices and Storage Corporation |
MOSFET N-CH 60V 2A UF6 |
|
NDS351NRochester Electronics |
SMALL SIGNAL FIELD-EFFECT TRANSI |
|
IPP200N15N3GXKSA1IR (Infineon Technologies) |
MOSFET N-CH 150V 50A TO220-3 |
|
IPB60R090CFD7ATMA1IR (Infineon Technologies) |
MOSFET N-CH 650V 25A TO263-3-2 |