MOSFET N-CH 60V 270MA TO236AB
Type | Description |
---|---|
Series: | TrenchMOS™ |
Package: | Tape & Reel (TR) |
Part Status: | Active |
FET Type: | N-Channel |
Technology: | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): | 60 V |
Current - Continuous Drain (Id) @ 25°C: | 270mA (Ta) |
Drive Voltage (Max Rds On, Min Rds On): | 5V, 10V |
Rds On (Max) @ Id, Vgs: | 2.8Ohm @ 200mA, 10V |
Vgs(th) (Max) @ Id: | 2.1V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: | 1 nC @ 10 V |
Vgs (Max): | ±20V |
Input Capacitance (Ciss) (Max) @ Vds: | 23.6 pF @ 10 V |
FET Feature: | - |
Power Dissipation (Max): | 310mW (Ta) |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Mounting Type: | Surface Mount |
Supplier Device Package: | TO-236AB |
Package / Case: | TO-236-3, SC-59, SOT-23-3 |
UNIT2, 22/F., RICHMOND COMM. BLDG., 109 ARGYLE STREET, MONGKOK, KOWLOON, HK
Office Hours : Mon-Fri, 9:00-18:30(GMT+8)
Phone: 00852-52612101
BSC040N10NS5SCATMA1IR (Infineon Technologies) |
MOSFET N-CH 100V 140A WSON-8 |
|
AON6262EAlpha and Omega Semiconductor, Inc. |
MOSFET N-CH 60V 40A 8DFN |
|
PMPB55ENEAXNexperia |
MOSFET N-CH 60V 4A DFN2020MD-6 |
|
RM4P30S6Rectron USA |
MOSFET P-CH 30V 4.2A SOT23-6 |
|
NTB18N06GRochester Electronics |
MOSFET N-CH 60V 15A D2PAK |
|
APT6025BFLLGRoving Networks / Microchip Technology |
MOSFET N-CH 600V 24A TO247 |
|
SI4850EY-T1-GE3Vishay / Siliconix |
MOSFET N-CH 60V 6A 8SO |
|
BFL4007Rochester Electronics |
MOSFET N-CH 600V 14/8.7A TO220FI |
|
STL90N6F7STMicroelectronics |
MOSFET N-CH 60V 90A POWERFLAT |
|
STD12N60M2STMicroelectronics |
MOSFET N-CHANNEL 600V 9A DPAK |
|
SI9433BDY-T1-E3Vishay / Siliconix |
MOSFET P-CH 20V 4.5A 8SO |
|
FQB9P25TMSanyo Semiconductor/ON Semiconductor |
MOSFET P-CH 250V 9.4A D2PAK |
|
IRF3007STRLPBFIR (Infineon Technologies) |
MOSFET N CH 75V 62A D2PAK |