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IPB80P03P4L07ATMA1

IPB80P03P4L07ATMA1

MOSFET P-CH 30V 80A TO263-3

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IPB80P03P4L07ATMA1

IPB80P03P4L07ATMA1

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Part No :

IPB80P03P4L07ATMA1

Manufacturer
IR (Infineon Technologies)
Description
MOSFET P-CH 30V 80A TO263-3
Catalog
Transistors - FETs, MOSFETs - Single
Availability
123312 pieces
Shipped from
HK warehouse
Expected Shipping Date
Nov 26 - Nov 30 2024
PDF
IPB80P03P4L07ATMA1 PDF
Type Description
Series:OptiMOS™
Package:Tape & Reel (TR)
Part Status:Not For New Designs
FET Type:P-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):30 V
Current - Continuous Drain (Id) @ 25°C:80A (Tc)
Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
Rds On (Max) @ Id, Vgs:6.9mOhm @ 80A, 10V
Vgs(th) (Max) @ Id:2V @ 130µA
Gate Charge (Qg) (Max) @ Vgs:80 nC @ 10 V
Vgs (Max):+5V, -16V
Input Capacitance (Ciss) (Max) @ Vds:5700 pF @ 25 V
FET Feature:-
Power Dissipation (Max):88W (Tc)
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:PG-TO263-3-2
Package / Case:TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
IPB80P03P4L07ATMA1 is available at GangBo-ic.com, Please review product page below for detailed information, including IPB80P03P4L07ATMA1 price, datasheets, in-stock availability, technical difficulties. Quickly Enter the access of compare list to find replaceable electronic parts. Want to gain comprehensive data for IPB80P03P4L07ATMA1 to optimize the supply chain (include cross references, lifecycle, parametric, counterfeit risk, obsolescence management forecasts), please contact to our Tech-supports team.

GANG BO INDUSTRIAL CO., LIMITED [Hongkong]

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