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IPB80P03P4L07ATMA1

IPB80P03P4L07ATMA1

MOSFET P-CH 30V 80A TO263-3

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IPB80P03P4L07ATMA1

IPB80P03P4L07ATMA1

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Part No :

IPB80P03P4L07ATMA1

Manufacturer
IR (Infineon Technologies)
Description
MOSFET P-CH 30V 80A TO263-3
Catalog
Transistors - FETs, MOSFETs - Single
Availability
123312 pieces
Shipped from
HK warehouse
Expected Shipping Date
May 18 - May 22 2024
PDF
IPB80P03P4L07ATMA1 PDF
Type Description
Series:OptiMOS™
Package:Tape & Reel (TR)
Part Status:Not For New Designs
FET Type:P-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):30 V
Current - Continuous Drain (Id) @ 25°C:80A (Tc)
Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
Rds On (Max) @ Id, Vgs:6.9mOhm @ 80A, 10V
Vgs(th) (Max) @ Id:2V @ 130µA
Gate Charge (Qg) (Max) @ Vgs:80 nC @ 10 V
Vgs (Max):+5V, -16V
Input Capacitance (Ciss) (Max) @ Vds:5700 pF @ 25 V
FET Feature:-
Power Dissipation (Max):88W (Tc)
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:PG-TO263-3-2
Package / Case:TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
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