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G3R350MT12J

G3R350MT12J

SIC MOSFET N-CH 11A TO263-7

G3R350MT12J

G3R350MT12J

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Part No :

G3R350MT12J

Manufacturer
GeneSiC Semiconductor
Description
SIC MOSFET N-CH 11A TO263-7
Catalog
Transistors - FETs, MOSFETs - Single
Availability
10664 pieces
Shipped from
HK warehouse
Expected Shipping Date
Dec 25 - Dec 29 2024
Type Description
Series:G3R™
Package:Tube
Part Status:Active
FET Type:N-Channel
Technology:SiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss):1200 V
Current - Continuous Drain (Id) @ 25°C:11A (Tc)
Drive Voltage (Max Rds On, Min Rds On):15V
Rds On (Max) @ Id, Vgs:420mOhm @ 4A, 15V
Vgs(th) (Max) @ Id:2.69V @ 2mA
Gate Charge (Qg) (Max) @ Vgs:12 nC @ 15 V
Vgs (Max):±15V
Input Capacitance (Ciss) (Max) @ Vds:334 pF @ 800 V
FET Feature:-
Power Dissipation (Max):75W (Tc)
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:TO-263-7
Package / Case:TO-263-8, D²Pak (7 Leads + Tab), TO-263CA
G3R350MT12J is available at GangBo-ic.com, Please review product page below for detailed information, including G3R350MT12J price, datasheets, in-stock availability, technical difficulties. Quickly Enter the access of compare list to find replaceable electronic parts. Want to gain comprehensive data for G3R350MT12J to optimize the supply chain (include cross references, lifecycle, parametric, counterfeit risk, obsolescence management forecasts), please contact to our Tech-supports team.

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