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IRFB9N65APBF

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MOSFET N-CH 650V 8.5A TO220AB

IRFB9N65APBF

IRFB9N65APBF

Image is for reference, please contact us to get the real picture

Part No :

IRFB9N65APBF

Manufacturer
Vishay / Siliconix
Description
MOSFET N-CH 650V 8.5A TO220AB
Catalog
Transistors - FETs, MOSFETs - Single
Availability
10994 pieces
Shipped from
HK warehouse
Expected Shipping Date
Nov 23 - Nov 27 2024
PDF
IRFB9N65APBF PDF
Type Description
Series:-
Package:Tube
Part Status:Active
FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):650 V
Current - Continuous Drain (Id) @ 25°C:8.5A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:930mOhm @ 5.1A, 10V
Vgs(th) (Max) @ Id:4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:48 nC @ 10 V
Vgs (Max):±30V
Input Capacitance (Ciss) (Max) @ Vds:1417 pF @ 25 V
FET Feature:-
Power Dissipation (Max):167W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:TO-220AB
Package / Case:TO-220-3
IRFB9N65APBF is available at GangBo-ic.com, Please review product page below for detailed information, including IRFB9N65APBF price, datasheets, in-stock availability, technical difficulties. Quickly Enter the access of compare list to find replaceable electronic parts. Want to gain comprehensive data for IRFB9N65APBF to optimize the supply chain (include cross references, lifecycle, parametric, counterfeit risk, obsolescence management forecasts), please contact to our Tech-supports team.

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