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IPD80R1K0CEBTMA1

IPD80R1K0CEBTMA1

MOSFET N-CH 800V 5.7A TO252-3

IPD80R1K0CEBTMA1

IPD80R1K0CEBTMA1

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Part No :

IPD80R1K0CEBTMA1

Manufacturer
Rochester Electronics
Description
MOSFET N-CH 800V 5.7A TO252-3
Catalog
Transistors - FETs, MOSFETs - Single
Availability
22266 pieces
Shipped from
HK warehouse
Expected Shipping Date
Nov 23 - Nov 27 2024
PDF
IPD80R1K0CEBTMA1 PDF
Type Description
Series:CoolMOS™
Package:Bulk
Part Status:Active
FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):800 V
Current - Continuous Drain (Id) @ 25°C:5.7A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:950mOhm @ 3.6A, 10V
Vgs(th) (Max) @ Id:3.9V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:31 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:785 pF @ 100 V
FET Feature:-
Power Dissipation (Max):83W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:TO-252-3
Package / Case:TO-252-3, DPak (2 Leads + Tab), SC-63
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