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SPD06N80C3ATMA1

SPD06N80C3ATMA1

MOSFET N-CH 800V 6A TO252-3

SPD06N80C3ATMA1

SPD06N80C3ATMA1

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Part No :

SPD06N80C3ATMA1

Manufacturer
IR (Infineon Technologies)
Description
MOSFET N-CH 800V 6A TO252-3
Catalog
Transistors - FETs, MOSFETs - Single
Availability
17340 pieces
Shipped from
HK warehouse
Expected Shipping Date
Nov 24 - Nov 28 2024
PDF
SPD06N80C3ATMA1 PDF
Type Description
Series:CoolMOS™
Package:Tape & Reel (TR)Cut Tape (CT)
Part Status:Active
FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):800 V
Current - Continuous Drain (Id) @ 25°C:6A (Ta)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:900mOhm @ 3.8A, 10V
Vgs(th) (Max) @ Id:3.9V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:41 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:785 pF @ 100 V
FET Feature:-
Power Dissipation (Max):83W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:PG-TO252-3
Package / Case:TO-252-3, DPak (2 Leads + Tab), SC-63
SPD06N80C3ATMA1 is available at GangBo-ic.com, Please review product page below for detailed information, including SPD06N80C3ATMA1 price, datasheets, in-stock availability, technical difficulties. Quickly Enter the access of compare list to find replaceable electronic parts. Want to gain comprehensive data for SPD06N80C3ATMA1 to optimize the supply chain (include cross references, lifecycle, parametric, counterfeit risk, obsolescence management forecasts), please contact to our Tech-supports team.

GANG BO INDUSTRIAL CO., LIMITED [Hongkong]

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