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FQP6N80

FQP6N80

MOSFET N-CH 800V 5.8A TO220-3

FQP6N80

FQP6N80

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Part No :

FQP6N80

Manufacturer
Rochester Electronics
Description
MOSFET N-CH 800V 5.8A TO220-3
Catalog
Transistors - FETs, MOSFETs - Single
Availability
12522 pieces
Shipped from
HK warehouse
Expected Shipping Date
Nov 13 - Nov 17 2024
PDF
FQP6N80 PDF
Type Description
Series:QFET®
Package:Tube
Part Status:Obsolete
FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):800 V
Current - Continuous Drain (Id) @ 25°C:5.8A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:1.95Ohm @ 2.9A, 10V
Vgs(th) (Max) @ Id:5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:31 nC @ 10 V
Vgs (Max):±30V
Input Capacitance (Ciss) (Max) @ Vds:1.5 pF @ 25 V
FET Feature:-
Power Dissipation (Max):158W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:TO-220-3
Package / Case:TO-220-3
FQP6N80 is available at GangBo-ic.com, Please review product page below for detailed information, including FQP6N80 price, datasheets, in-stock availability, technical difficulties. Quickly Enter the access of compare list to find replaceable electronic parts. Want to gain comprehensive data for FQP6N80 to optimize the supply chain (include cross references, lifecycle, parametric, counterfeit risk, obsolescence management forecasts), please contact to our Tech-supports team.

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