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STI33N60M6

STI33N60M6

MOSFET N-CH 600V 25A I2PAK

STI33N60M6

STI33N60M6

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Part No :

STI33N60M6

Manufacturer
STMicroelectronics
Description
MOSFET N-CH 600V 25A I2PAK
Catalog
Transistors - FETs, MOSFETs - Single
Availability
802880 pieces
Shipped from
HK warehouse
Expected Shipping Date
Dec 28 - Jan 01 2024
Type Description
Series:MDmesh™ M6
Package:Tube
Part Status:Active
FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):600 V
Current - Continuous Drain (Id) @ 25°C:25A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:125mOhm @ 12.5A, 10V
Vgs(th) (Max) @ Id:4.75V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:33.4 nC @ 10 V
Vgs (Max):±25V
Input Capacitance (Ciss) (Max) @ Vds:1515 pF @ 100 V
FET Feature:-
Power Dissipation (Max):190W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:I2PAK (TO-262)
Package / Case:TO-262-3 Long Leads, I²Pak, TO-262AA
STI33N60M6 is available at GangBo-ic.com, Please review product page below for detailed information, including STI33N60M6 price, datasheets, in-stock availability, technical difficulties. Quickly Enter the access of compare list to find replaceable electronic parts. Want to gain comprehensive data for STI33N60M6 to optimize the supply chain (include cross references, lifecycle, parametric, counterfeit risk, obsolescence management forecasts), please contact to our Tech-supports team.

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