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FQI2N80TU

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FQI2N80TU

FQI2N80TU

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Part No :

FQI2N80TU

Manufacturer
Rochester Electronics
Description
MOSFET N-CH 800V 2.4A I2PAK
Catalog
Transistors - FETs, MOSFETs - Single
Availability
10550 pieces
Shipped from
HK warehouse
Expected Shipping Date
Oct 28 - Nov 01 2025
PDF
FQI2N80TU PDF
Type Description
Series:QFET®
Package:Tube
Part Status:Obsolete
FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):800 V
Current - Continuous Drain (Id) @ 25°C:2.4A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:6.3Ohm @ 900mA, 10V
Vgs(th) (Max) @ Id:5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:15 nC @ 10 V
Vgs (Max):±30V
Input Capacitance (Ciss) (Max) @ Vds:550 pF @ 25 V
FET Feature:-
Power Dissipation (Max):3.13W (Ta), 85W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:I2PAK
Package / Case:TO-262-3 Long Leads, I²Pak, TO-262AA
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