MOSFET N-CH 600V 41A TO220AB
Type | Description |
---|---|
Series: | EF |
Package: | Tube |
Part Status: | Active |
FET Type: | N-Channel |
Technology: | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): | 600 V |
Current - Continuous Drain (Id) @ 25°C: | 41A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Rds On (Max) @ Id, Vgs: | 68mOhm @ 16A, 10V |
Vgs(th) (Max) @ Id: | 5V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: | 77 nC @ 10 V |
Vgs (Max): | ±30V |
Input Capacitance (Ciss) (Max) @ Vds: | 2628 pF @ 100 V |
FET Feature: | - |
Power Dissipation (Max): | 250W (Tc) |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Mounting Type: | Through Hole |
Supplier Device Package: | TO-220AB |
Package / Case: | TO-220-3 |
UNIT2, 22/F., RICHMOND COMM. BLDG., 109 ARGYLE STREET, MONGKOK, KOWLOON, HK
Office Hours : Mon-Fri, 9:00-18:30(GMT+8)
Phone: 00852-52612101
STF10NK50ZSTMicroelectronics |
MOSFET N-CH 500V 9A TO220FP |
|
IRF610PBF-BE3Vishay / Siliconix |
MOSFET N-CH 200V 3.3A TO220AB |
|
SIHF18N50D-E3Vishay / Siliconix |
MOSFET N-CH 500V 18A TO220 |
|
IRL2203NSTRLPBFRochester Electronics |
MOSFET N-CH 30V 116A D2PAK |
|
IPD50N08S413ATMA1IR (Infineon Technologies) |
MOSFET N-CH 80V 50A TO252-3 |
|
FDU7N60NZTURochester Electronics |
MOSFET N-CH 600V 5.5A I-PAK |
|
IPD30N06S3L-20Rochester Electronics |
N-CHANNEL POWER MOSFET |
|
DMN7022LFG-7Zetex Semiconductors (Diodes Inc.) |
MOSFET N-CH 75V 7.8A PWRDI3333-8 |
|
IRF820APBF-BE3Vishay / Siliconix |
MOSFET N-CH 500V 2.5A TO220AB |
|
EKI07117Sanken Electric Co., Ltd. |
MOSFET N-CH 75V 62A TO220-3 |
|
IRFR4105TRPBFIR (Infineon Technologies) |
MOSFET N-CH 55V 27A DPAK |
|
IPAN80R450P7XKSA1IR (Infineon Technologies) |
MOSFET N-CH 800V 11A TO220-3-31 |
|
2SK2803Sanken Electric Co., Ltd. |
MOSFET N-CH 450V 3A TO220F |