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IPZ60R060C7XKSA1

IPZ60R060C7XKSA1

MOSFET N-CH 600V 35A TO247-4

IPZ60R060C7XKSA1

IPZ60R060C7XKSA1

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Part No :

IPZ60R060C7XKSA1

Manufacturer
Rochester Electronics
Description
MOSFET N-CH 600V 35A TO247-4
Catalog
Transistors - FETs, MOSFETs - Single
Availability
10220 pieces
Shipped from
HK warehouse
Expected Shipping Date
Jan 24 - Jan 28 2025
PDF
IPZ60R060C7XKSA1 PDF
Type Description
Series:CoolMOS™ C7
Package:Bulk
Part Status:Active
FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):600 V
Current - Continuous Drain (Id) @ 25°C:35A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:60mOhm @ 15.9A, 10V
Vgs(th) (Max) @ Id:4V @ 800µA
Gate Charge (Qg) (Max) @ Vgs:68 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:2.85 pF @ 400 V
FET Feature:-
Power Dissipation (Max):162W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:PG-TO247-4
Package / Case:TO-247-4
IPZ60R060C7XKSA1 is available at GangBo-ic.com, Please review product page below for detailed information, including IPZ60R060C7XKSA1 price, datasheets, in-stock availability, technical difficulties. Quickly Enter the access of compare list to find replaceable electronic parts. Want to gain comprehensive data for IPZ60R060C7XKSA1 to optimize the supply chain (include cross references, lifecycle, parametric, counterfeit risk, obsolescence management forecasts), please contact to our Tech-supports team.

GANG BO INDUSTRIAL CO., LIMITED [Hongkong]

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