3.5A, 200V, 1.500 OHM, P-CHANNEL
Type | Description |
---|---|
Series: | - |
Package: | Bulk |
Part Status: | Active |
FET Type: | P-Channel |
Technology: | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): | 200 V |
Current - Continuous Drain (Id) @ 25°C: | 3.5A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Rds On (Max) @ Id, Vgs: | 1.5Ohm @ 1.5A, 10V |
Vgs(th) (Max) @ Id: | 4V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: | 22 nC @ 10 V |
Vgs (Max): | ±20V |
Input Capacitance (Ciss) (Max) @ Vds: | 350 pF @ 25 V |
FET Feature: | - |
Power Dissipation (Max): | 40W (Tc) |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Mounting Type: | Through Hole |
Supplier Device Package: | TO-220AB |
Package / Case: | TO-220-3 |
UNIT2, 22/F., RICHMOND COMM. BLDG., 109 ARGYLE STREET, MONGKOK, KOWLOON, HK
Office Hours : Mon-Fri, 9:00-18:30(GMT+8)
Phone: 00852-52612101
IXTP34N65X2Wickmann / Littelfuse |
MOSFET N-CH 650V 34A TO220AB |
|
IRF740SPBFVishay / Siliconix |
MOSFET N-CH 400V 10A D2PAK |
|
IXTA340N04T4Wickmann / Littelfuse |
MOSFET N-CH 40V 340A TO263AA |
|
IRFIZ24GPBFVishay / Siliconix |
MOSFET N-CH 60V 14A TO220-3 |
|
STP4NK60ZSTMicroelectronics |
MOSFET N-CH 600V 4A TO220AB |
|
NTTFS5C466NLTAGSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 14A/51A 8WDFN |
|
MGSF3442XT1Rochester Electronics |
SMALL SIGNAL N-CHANNEL MOSFET |
|
MTB52N06VLRochester Electronics |
N-CHANNEL POWER MOSFET |
|
SQD19P06-60L_GE3Vishay / Siliconix |
MOSFET P-CH 60V 20A TO252 |
|
TSM2308CX RFGTSC (Taiwan Semiconductor) |
MOSFET N-CHANNEL 60V 3A SOT23 |
|
SFS9640Rochester Electronics |
POWER FIELD-EFFECT TRANSISTOR |
|
NP15P06SLG-E1-AYRenesas Electronics America |
MOSFET P-CH 60V 15A TO252 |
|
IRFU9110Rochester Electronics |
3.1A 100V 1.200 OHM P-CHANNEL |