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FQU1N60CTU

FQU1N60CTU

MOSFET N-CH 600V 1A IPAK

FQU1N60CTU

FQU1N60CTU

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Part No :

FQU1N60CTU

Manufacturer
Sanyo Semiconductor/ON Semiconductor
Description
MOSFET N-CH 600V 1A IPAK
Catalog
Transistors - FETs, MOSFETs - Single
Availability
425015120 pieces
Shipped from
HK warehouse
Expected Shipping Date
Dec 29 - Jan 02 2024
PDF
FQU1N60CTU PDF
Type Description
Series:QFET®
Package:Tube
Part Status:Active
FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):600 V
Current - Continuous Drain (Id) @ 25°C:1A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:11.5Ohm @ 500mA, 10V
Vgs(th) (Max) @ Id:4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:6.2 nC @ 10 V
Vgs (Max):±30V
Input Capacitance (Ciss) (Max) @ Vds:170 pF @ 25 V
FET Feature:-
Power Dissipation (Max):2.5W (Ta), 28W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:I-PAK
Package / Case:TO-251-3 Short Leads, IPak, TO-251AA
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