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GA50JT12-247

GA50JT12-247

TRANS SJT 1200V 100A TO247AB

BR24L01A-W

BR24L01A-W

IC EEPROM 1KBIT I2C 400KHZ 8DIP

GA50JT12-247

GA50JT12-247

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Part No :

GA50JT12-247

Manufacturer
GeneSiC Semiconductor
Description
TRANS SJT 1200V 100A TO247AB
Catalog
Transistors - FETs, MOSFETs - Single
Availability
142214 pieces
Shipped from
HK warehouse
Expected Shipping Date
Nov 24 - Nov 28 2024
PDF
GA50JT12-247 PDF
Type Description
Series:-
Package:Tube
Part Status:Obsolete
FET Type:-
Technology:SiC (Silicon Carbide Junction Transistor)
Drain to Source Voltage (Vdss):1200 V
Current - Continuous Drain (Id) @ 25°C:100A (Tc)
Drive Voltage (Max Rds On, Min Rds On):-
Rds On (Max) @ Id, Vgs:25mOhm @ 50A
Vgs(th) (Max) @ Id:-
Gate Charge (Qg) (Max) @ Vgs:-
Vgs (Max):-
Input Capacitance (Ciss) (Max) @ Vds:7209 pF @ 800 V
FET Feature:-
Power Dissipation (Max):583W (Tc)
Operating Temperature:175°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:TO-247AB
Package / Case:TO-247-3
GA50JT12-247 is available at GangBo-ic.com, Please review product page below for detailed information, including GA50JT12-247 price, datasheets, in-stock availability, technical difficulties. Quickly Enter the access of compare list to find replaceable electronic parts. Want to gain comprehensive data for GA50JT12-247 to optimize the supply chain (include cross references, lifecycle, parametric, counterfeit risk, obsolescence management forecasts), please contact to our Tech-supports team.

GANG BO INDUSTRIAL CO., LIMITED [Hongkong]

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