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NVD5117PLT4G-VF01

NVD5117PLT4G-VF01

MOSFET P-CH 60V 11A/61A DPAK

NVD5117PLT4G-VF01

NVD5117PLT4G-VF01

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Part No :

NVD5117PLT4G-VF01

Manufacturer
Sanyo Semiconductor/ON Semiconductor
Description
MOSFET P-CH 60V 11A/61A DPAK
Catalog
Transistors - FETs, MOSFETs - Single
Availability
581958 pieces
Shipped from
HK warehouse
Expected Shipping Date
Nov 24 - Nov 28 2024
PDF
NVD5117PLT4G-VF01 PDF
Type Description
Series:-
Package:Tape & Reel (TR)Cut Tape (CT)
Part Status:Active
FET Type:P-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):60 V
Current - Continuous Drain (Id) @ 25°C:11A (Ta), 61A (Tc)
Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
Rds On (Max) @ Id, Vgs:16mOhm @ 29A, 10V
Vgs(th) (Max) @ Id:2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:85 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:4800 pF @ 25 V
FET Feature:-
Power Dissipation (Max):4.1W (Ta), 118W (Tc)
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:DPAK
Package / Case:TO-252-3, DPak (2 Leads + Tab), SC-63
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