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FDD6N50TM

FDD6N50TM

MOSFET N-CH 500V 6A DPAK

FDD6N50TM

FDD6N50TM

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Part No :

FDD6N50TM

Manufacturer
Rochester Electronics
Description
MOSFET N-CH 500V 6A DPAK
Catalog
Transistors - FETs, MOSFETs - Single
Availability
23195 pieces
Shipped from
HK warehouse
Expected Shipping Date
Nov 28 - Dec 02 2024
PDF
FDD6N50TM PDF
Type Description
Series:UniFET™
Package:Bulk
Part Status:Active
FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):500 V
Current - Continuous Drain (Id) @ 25°C:6A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:900mOhm @ 3A, 10V
Vgs(th) (Max) @ Id:5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:16.6 nC @ 10 V
Vgs (Max):±30V
Input Capacitance (Ciss) (Max) @ Vds:9.4 pF @ 25 V
FET Feature:-
Power Dissipation (Max):89W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:D-Pak
Package / Case:TO-252-3, DPak (2 Leads + Tab), SC-63
FDD6N50TM is available at GangBo-ic.com, Please review product page below for detailed information, including FDD6N50TM price, datasheets, in-stock availability, technical difficulties. Quickly Enter the access of compare list to find replaceable electronic parts. Want to gain comprehensive data for FDD6N50TM to optimize the supply chain (include cross references, lifecycle, parametric, counterfeit risk, obsolescence management forecasts), please contact to our Tech-supports team.

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