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BSZ165N04NSGATMA1

BSZ165N04NSGATMA1

MOSFET N-CH 40V 8.9A/31A TSDSON

BSZ165N04NSGATMA1

BSZ165N04NSGATMA1

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Part No :

BSZ165N04NSGATMA1

Manufacturer
Rochester Electronics
Description
MOSFET N-CH 40V 8.9A/31A TSDSON
Catalog
Transistors - FETs, MOSFETs - Single
Availability
11900 pieces
Shipped from
HK warehouse
Expected Shipping Date
Nov 27 - Dec 01 2024
PDF
BSZ165N04NSGATMA1 PDF
Type Description
Series:OptiMOS™
Package:Bulk
Part Status:Obsolete
FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):40 V
Current - Continuous Drain (Id) @ 25°C:8.9A (Ta), 31A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:16.5mOhm @ 20A, 10V
Vgs(th) (Max) @ Id:4V @ 10µA
Gate Charge (Qg) (Max) @ Vgs:10 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:840 pF @ 20 V
FET Feature:-
Power Dissipation (Max):2.1W (Ta), 25W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:PG-TSDSON-8
Package / Case:8-PowerTDFN
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