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IRF640NPBF

IRF640NPBF

MOSFET N-CH 200V 18A TO220AB

IRF640NPBF

IRF640NPBF

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Part No :

IRF640NPBF

Manufacturer
IR (Infineon Technologies)
Description
MOSFET N-CH 200V 18A TO220AB
Catalog
Transistors - FETs, MOSFETs - Single
Availability
14455 pieces
Shipped from
HK warehouse
Expected Shipping Date
Jun 27 - Jul 01 2024
PDF
IRF640NPBF PDF
Type Description
Series:HEXFET®
Package:Tube
Part Status:Active
FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):200 V
Current - Continuous Drain (Id) @ 25°C:18A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:150mOhm @ 11A, 10V
Vgs(th) (Max) @ Id:4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:67 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:1160 pF @ 25 V
FET Feature:-
Power Dissipation (Max):150W (Tc)
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:TO-220AB
Package / Case:TO-220-3
IRF640NPBF is available at GangBo-ic.com, Please review product page below for detailed information, including IRF640NPBF price, datasheets, in-stock availability, technical difficulties. Quickly Enter the access of compare list to find replaceable electronic parts. Want to gain comprehensive data for IRF640NPBF to optimize the supply chain (include cross references, lifecycle, parametric, counterfeit risk, obsolescence management forecasts), please contact to our Tech-supports team.

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