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TPS1101DR

TPS1101DR

MOSFET P-CH 15V 2.3A 8SOIC

TPS1101DR

TPS1101DR

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Part No :

TPS1101DR

Manufacturer
Texas Instruments
Description
MOSFET P-CH 15V 2.3A 8SOIC
Catalog
Transistors - FETs, MOSFETs - Single
Availability
671767 pieces
Shipped from
HK warehouse
Expected Shipping Date
Nov 24 - Nov 28 2024
Type Description
Series:-
Package:Tape & Reel (TR)
Part Status:Active
FET Type:P-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):15 V
Current - Continuous Drain (Id) @ 25°C:2.3A (Ta)
Drive Voltage (Max Rds On, Min Rds On):2.7V, 10V
Rds On (Max) @ Id, Vgs:90mOhm @ 2.5A, 10V
Vgs(th) (Max) @ Id:1.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:11.25 nC @ 10 V
Vgs (Max):+2V, -15V
Input Capacitance (Ciss) (Max) @ Vds:-
FET Feature:-
Power Dissipation (Max):791mW (Ta)
Operating Temperature:-40°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:8-SOIC
Package / Case:8-SOIC (0.154", 3.90mm Width)
TPS1101DR is available at GangBo-ic.com, Please review product page below for detailed information, including TPS1101DR price, datasheets, in-stock availability, technical difficulties. Quickly Enter the access of compare list to find replaceable electronic parts. Want to gain comprehensive data for TPS1101DR to optimize the supply chain (include cross references, lifecycle, parametric, counterfeit risk, obsolescence management forecasts), please contact to our Tech-supports team.

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