MOSFET N-CH 600V 4.5A TO220-3
Type | Description |
---|---|
Series: | QFET® |
Package: | Tube |
Part Status: | Active |
FET Type: | N-Channel |
Technology: | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): | 600 V |
Current - Continuous Drain (Id) @ 25°C: | 4.5A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Rds On (Max) @ Id, Vgs: | 2.5Ohm @ 2.25A, 10V |
Vgs(th) (Max) @ Id: | 4V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: | 19 nC @ 10 V |
Vgs (Max): | ±30V |
Input Capacitance (Ciss) (Max) @ Vds: | 670 pF @ 25 V |
FET Feature: | - |
Power Dissipation (Max): | 100W (Tc) |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Mounting Type: | Through Hole |
Supplier Device Package: | TO-220-3 |
Package / Case: | TO-220-3 |
UNIT2, 22/F., RICHMOND COMM. BLDG., 109 ARGYLE STREET, MONGKOK, KOWLOON, HK
Office Hours : Mon-Fri, 9:00-18:30(GMT+8)
Phone: 00852-52612101
IPD70R2K0CEAUMA1IR (Infineon Technologies) |
MOSFET N-CH 700V 4A TO252-3 |
|
IPB180N04S4L01ATMA1IR (Infineon Technologies) |
MOSFET N-CH 40V 180A TO263-7 |
|
TPS1101DRTexas Instruments |
MOSFET P-CH 15V 2.3A 8SOIC |
|
IPP60R360P7XKSA1IR (Infineon Technologies) |
MOSFET N-CH 650V 9A TO220-3 |
|
SSM3K37MFV,L3FToshiba Electronic Devices and Storage Corporation |
MOSFET N-CH 20V 250MA VESM |
|
MMBF1374T1Rochester Electronics |
SMALL SIGNAL N-CHANNEL MOSFET |
|
SIHF7N60E-GE3Vishay / Siliconix |
MOSFET N-CHANNEL 600V 7A TO220 |
|
FDMS1D4N03SSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 30V 211A 8PQFN |
|
SI4420DYTRPBFIR (Infineon Technologies) |
MOSFET N-CH 30V 12.5A 8SO |
|
SQ3419EV-T1_BE3Vishay / Siliconix |
MOSFET P-CH 40V 6.9A 6TSOP |
|
SSR1N60BTM-WSRochester Electronics |
MOSFET N-CH 600V 900MA DPAK |
|
FDC654PSanyo Semiconductor/ON Semiconductor |
MOSFET P-CH 30V 3.6A SUPERSOT6 |
|
SSM3J372R,LXHFToshiba Electronic Devices and Storage Corporation |
AECQ MOSFET PCH -30V -6A SOT23F |