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IPN80R2K0P7ATMA1

IPN80R2K0P7ATMA1

MOSFET N-CHANNEL 800V 3A SOT223

IPN80R2K0P7ATMA1

IPN80R2K0P7ATMA1

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Part No :

IPN80R2K0P7ATMA1

Manufacturer
IR (Infineon Technologies)
Description
MOSFET N-CHANNEL 800V 3A SOT223
Catalog
Transistors - FETs, MOSFETs - Single
Availability
13957 pieces
Shipped from
HK warehouse
Expected Shipping Date
Nov 15 - Nov 19 2024
Type Description
Series:CoolMOS™ P7
Package:Tape & Reel (TR)Cut Tape (CT)
Part Status:Active
FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):800 V
Current - Continuous Drain (Id) @ 25°C:3A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:2Ohm @ 940mA, 10V
Vgs(th) (Max) @ Id:3.5V @ 50µA
Gate Charge (Qg) (Max) @ Vgs:9 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:175 pF @ 500 V
FET Feature:-
Power Dissipation (Max):6W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:PG-SOT223
Package / Case:TO-261-3
IPN80R2K0P7ATMA1 is available at GangBo-ic.com, Please review product page below for detailed information, including IPN80R2K0P7ATMA1 price, datasheets, in-stock availability, technical difficulties. Quickly Enter the access of compare list to find replaceable electronic parts. Want to gain comprehensive data for IPN80R2K0P7ATMA1 to optimize the supply chain (include cross references, lifecycle, parametric, counterfeit risk, obsolescence management forecasts), please contact to our Tech-supports team.

GANG BO INDUSTRIAL CO., LIMITED [Hongkong]

UNIT2, 22/F., RICHMOND COMM. BLDG., 109 ARGYLE STREET, MONGKOK, KOWLOON, HK

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