RES 309K OHM 0.5% 1/8W 0805
RES 576K OHM 0.4W 1% AXIAL
MOSFET N-CH 60V 360A TO263-7
Type | Description |
---|---|
Series: | StrongIRFET™ |
Package: | Tape & Reel (TR)Cut Tape (CT) |
Part Status: | Active |
FET Type: | N-Channel |
Technology: | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): | 60 V |
Current - Continuous Drain (Id) @ 25°C: | 360A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): | 6V, 10V |
Rds On (Max) @ Id, Vgs: | 1.3mOhm @ 100A, 10V |
Vgs(th) (Max) @ Id: | 3.7V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: | 388 nC @ 10 V |
Vgs (Max): | ±20V |
Input Capacitance (Ciss) (Max) @ Vds: | 16000 pF @ 30 V |
FET Feature: | - |
Power Dissipation (Max): | 2.4W (Ta), 417W (Tc) |
Operating Temperature: | -55°C ~ 175°C (TJ) |
Mounting Type: | Surface Mount |
Supplier Device Package: | PG-TO263-7 |
Package / Case: | TO-263-7, D²Pak (6 Leads + Tab) |
UNIT2, 22/F., RICHMOND COMM. BLDG., 109 ARGYLE STREET, MONGKOK, KOWLOON, HK
Office Hours : Mon-Fri, 9:00-18:30(GMT+8)
Phone: 00852-52612101
ZVP0545GTAZetex Semiconductors (Diodes Inc.) |
MOSFET P-CH 450V 75MA SOT223 |
|
DMN3032LE-13Zetex Semiconductors (Diodes Inc.) |
MOSFET N-CH 30V 5.6A SOT223 |
|
IPU60R600C6Rochester Electronics |
N-CHANNEL POWER MOSFET |
|
RS1L145GNTBROHM Semiconductor |
MOSFET N-CH 60V 14.5A/47A 8HSOP |
|
STB20NM50FDT4STMicroelectronics |
MOSFET N-CH 500V 20A D2PAK |
|
IXTA34N65X2-TRLWickmann / Littelfuse |
MOSFET N-CH 650V 34A TO263 |
|
STD2NK90ZT4STMicroelectronics |
MOSFET N-CH 900V 2.1A DPAK |
|
BSC0302LSATMA1IR (Infineon Technologies) |
MOSFET N-CH 120V 12A/99A TDSON |
|
NTE2388NTE Electronics, Inc. |
MOSFET N-CHANNEL 200V 18A TO220 |
|
TSM150NB04CR RLGTSC (Taiwan Semiconductor) |
MOSFET N-CH 40V 10A/41A 8PDFN |
|
STW34N65M5STMicroelectronics |
MOSFET N-CH 650V 28A TO247 |
|
FDMS7692ARochester Electronics |
MOSFET N-CH 30V 13.5A/28A 8PQFN |
|
PSMN7R5-25YLC,115Rochester Electronics |
MOSFET N-CH 25V 56A LFPAK56 |