IC AMP RF LDMOS H-33288-6
Type | Description |
---|---|
Series: | - |
Package: | Strip |
Part Status: | Not For New Designs |
Transistor Type: | LDMOS |
Frequency: | 1.88GHz |
Gain: | 19dB |
Voltage - Test: | 30 V |
Current Rating (Amps): | - |
Noise Figure: | - |
Current - Test: | 1.85 A |
Power - Output: | 50W |
Voltage - Rated: | 65 V |
Package / Case: | H-33288-6 |
Supplier Device Package: | H-33288-6 |
UNIT2, 22/F., RICHMOND COMM. BLDG., 109 ARGYLE STREET, MONGKOK, KOWLOON, HK
Office Hours : Mon-Fri, 9:00-18:30(GMT+8)
Phone: 00852-52612101
MCH6413-TL-ERochester Electronics |
NCH 1.8V DRIVE SERIES |
|
ON5452,518Rochester Electronics |
ON5452 - RF POWER MOSFET |
|
3LN02C-TB-ERochester Electronics |
NCH 1.5V DRIVE SERIES |
|
NE4210S01-T1BRochester Electronics |
SMALL SIGNAL N-CHANNEL MOSFET |
|
2SK3293-TD-ERochester Electronics |
NCH 4V DRIVE SERIES |
|
AFT26P100-4WGSR3NXP Semiconductors |
RF MOSFET 2.6GHZ 100W NI780S-6 |
|
MMRF2005GNR1NXP Semiconductors |
SINGLE W-CDMA RF LDMOS WIDEBAND |
|
STAC0912-250STMicroelectronics |
250W 36V 960-1215 MHZ LDMOS TRAN |
|
BF 1009SR E6327Rochester Electronics |
RF N-CHANNEL MOSFET |
|
CGHV59070PWolfspeed - a Cree company |
70W, GAN HEMT, 50V, 5.2-5.9GHZ, |
|
BLP10H660PYAmpleon |
RF MOSFET LDMOS 50V 4-HSOPF |
|
MRF24300GNR3NXP Semiconductors |
RF POWER LDMOS TRANSISTOR 2450 |
|
MCH5835-TL-ERochester Electronics |
NCH+SBD 2.5V DRIVE SERIES |