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1808Y0630392FFT

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MVDF2C03HDR2G

MVDF2C03HDR2G

MOSFET N/P-CH 30V 4.1A/3A 8SOIC

MVDF2C03HDR2G

MVDF2C03HDR2G

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Part No :

MVDF2C03HDR2G

Manufacturer
Sanyo Semiconductor/ON Semiconductor
Description
MOSFET N/P-CH 30V 4.1A/3A 8SOIC
Catalog
Transistors - FETs, MOSFETs - Arrays
Availability
587658 pieces
Shipped from
HK warehouse
Expected Shipping Date
Feb 25 - Mar 01 2025
PDF
MVDF2C03HDR2G PDF
Type Description
Series:-
Package:Tape & Reel (TR)
Part Status:Obsolete
FET Type:N and P-Channel Complementary
FET Feature:Logic Level Gate
Drain to Source Voltage (Vdss):30V
Current - Continuous Drain (Id) @ 25°C:4.1A, 3A
Rds On (Max) @ Id, Vgs:70mOhm @ 3A, 10V
Vgs(th) (Max) @ Id:3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:16nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds:630pF @ 24V
Power - Max:2W
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Package / Case:8-SOIC (0.154", 3.90mm Width)
Supplier Device Package:8-SOIC
MVDF2C03HDR2G is available at GangBo-ic.com, Please review product page below for detailed information, including MVDF2C03HDR2G price, datasheets, in-stock availability, technical difficulties. Quickly Enter the access of compare list to find replaceable electronic parts. Want to gain comprehensive data for MVDF2C03HDR2G to optimize the supply chain (include cross references, lifecycle, parametric, counterfeit risk, obsolescence management forecasts), please contact to our Tech-supports team.

GANG BO INDUSTRIAL CO., LIMITED [Hongkong]

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