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NTMD6601NR2G

NTMD6601NR2G

SMALL SIGNAL N-CHANNEL MOSFET

NTMD6601NR2G

NTMD6601NR2G

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Part No :

NTMD6601NR2G

Manufacturer
Rochester Electronics
Description
SMALL SIGNAL N-CHANNEL MOSFET
Catalog
Transistors - FETs, MOSFETs - Arrays
Availability
61711 pieces
Shipped from
HK warehouse
Expected Shipping Date
Nov 27 - Dec 01 2024
PDF
NTMD6601NR2G PDF
Type Description
Series:-
Package:Bulk
Part Status:Obsolete
FET Type:2 N-Channel (Dual)
FET Feature:Logic Level Gate
Drain to Source Voltage (Vdss):80V
Current - Continuous Drain (Id) @ 25°C:1.1A
Rds On (Max) @ Id, Vgs:215mOhm @ 2.2A, 10V
Vgs(th) (Max) @ Id:3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:15nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds:400pF @ 25V
Power - Max:600mW
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Package / Case:8-SOIC (0.154", 3.90mm Width)
Supplier Device Package:8-SOIC
NTMD6601NR2G is available at GangBo-ic.com, Please review product page below for detailed information, including NTMD6601NR2G price, datasheets, in-stock availability, technical difficulties. Quickly Enter the access of compare list to find replaceable electronic parts. Want to gain comprehensive data for NTMD6601NR2G to optimize the supply chain (include cross references, lifecycle, parametric, counterfeit risk, obsolescence management forecasts), please contact to our Tech-supports team.

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