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NDS9953A

NDS9953A

P-CHANNEL POWER MOSFET

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NDS9953A

NDS9953A

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Part No :

NDS9953A

Manufacturer
Rochester Electronics
Description
P-CHANNEL POWER MOSFET
Catalog
Transistors - FETs, MOSFETs - Arrays
Availability
304444 pieces
Shipped from
HK warehouse
Expected Shipping Date
Nov 15 - Nov 19 2024
PDF
NDS9953A PDF
Type Description
Series:-
Package:Bulk
Part Status:Obsolete
FET Type:2 P-Channel (Dual)
FET Feature:Logic Level Gate
Drain to Source Voltage (Vdss):30V
Current - Continuous Drain (Id) @ 25°C:2.9A
Rds On (Max) @ Id, Vgs:130mOhm @ 1A, 10V
Vgs(th) (Max) @ Id:2.8V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:25nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds:350pF @ 10V
Power - Max:900mW
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Package / Case:8-SOIC (0.154", 3.90mm Width)
Supplier Device Package:8-SOIC
NDS9953A is available at GangBo-ic.com, Please review product page below for detailed information, including NDS9953A price, datasheets, in-stock availability, technical difficulties. Quickly Enter the access of compare list to find replaceable electronic parts. Want to gain comprehensive data for NDS9953A to optimize the supply chain (include cross references, lifecycle, parametric, counterfeit risk, obsolescence management forecasts), please contact to our Tech-supports team.

GANG BO INDUSTRIAL CO., LIMITED [Hongkong]

UNIT2, 22/F., RICHMOND COMM. BLDG., 109 ARGYLE STREET, MONGKOK, KOWLOON, HK

Office Hours : Mon-Fri, 9:00-18:30(GMT+8)

[email protected]

Phone: 00852-52612101

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