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IPG20N06S2L50AATMA1

IPG20N06S2L50AATMA1

MOSFET 2N-CH 55V 20A 8TDSON

IPG20N06S2L50AATMA1

IPG20N06S2L50AATMA1

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Part No :

IPG20N06S2L50AATMA1

Manufacturer
IR (Infineon Technologies)
Description
MOSFET 2N-CH 55V 20A 8TDSON
Catalog
Transistors - FETs, MOSFETs - Arrays
Availability
660666 pieces
Shipped from
HK warehouse
Expected Shipping Date
Nov 27 - Dec 01 2024
PDF
IPG20N06S2L50AATMA1 PDF
Type Description
Series:Automotive, AEC-Q101, OptiMOS™
Package:Tape & Reel (TR)
Part Status:Active
FET Type:2 N-Channel (Dual)
FET Feature:Logic Level Gate
Drain to Source Voltage (Vdss):55V
Current - Continuous Drain (Id) @ 25°C:20A
Rds On (Max) @ Id, Vgs:50mOhm @ 15A, 10V
Vgs(th) (Max) @ Id:2V @ 19µA
Gate Charge (Qg) (Max) @ Vgs:17nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds:560pF @ 25V
Power - Max:51W
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Surface Mount, Wettable Flank
Package / Case:8-PowerVDFN
Supplier Device Package:PG-TDSON-8-10
IPG20N06S2L50AATMA1 is available at GangBo-ic.com, Please review product page below for detailed information, including IPG20N06S2L50AATMA1 price, datasheets, in-stock availability, technical difficulties. Quickly Enter the access of compare list to find replaceable electronic parts. Want to gain comprehensive data for IPG20N06S2L50AATMA1 to optimize the supply chain (include cross references, lifecycle, parametric, counterfeit risk, obsolescence management forecasts), please contact to our Tech-supports team.

GANG BO INDUSTRIAL CO., LIMITED [Hongkong]

UNIT2, 22/F., RICHMOND COMM. BLDG., 109 ARGYLE STREET, MONGKOK, KOWLOON, HK

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