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SI5908DC-T1-GE3

SI5908DC-T1-GE3

MOSFET 2N-CH 20V 4.4A 1206-8

SI5908DC-T1-GE3

SI5908DC-T1-GE3

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Part No :

SI5908DC-T1-GE3

Manufacturer
Vishay / Siliconix
Description
MOSFET 2N-CH 20V 4.4A 1206-8
Catalog
Transistors - FETs, MOSFETs - Arrays
Availability
14968 pieces
Shipped from
HK warehouse
Expected Shipping Date
Nov 23 - Nov 27 2024
PDF
SI5908DC-T1-GE3 PDF
Type Description
Series:TrenchFET®
Package:Tape & Reel (TR)Cut Tape (CT)
Part Status:Active
FET Type:2 N-Channel (Dual)
FET Feature:Logic Level Gate
Drain to Source Voltage (Vdss):20V
Current - Continuous Drain (Id) @ 25°C:4.4A
Rds On (Max) @ Id, Vgs:40mOhm @ 4.4A, 4.5V
Vgs(th) (Max) @ Id:1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:7.5nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds:-
Power - Max:1.1W
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Package / Case:8-SMD, Flat Lead
Supplier Device Package:1206-8 ChipFET™
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