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NTMD6N02R2

NTMD6N02R2

N-CHANNEL POWER MOSFET

NTMD6N02R2

NTMD6N02R2

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Part No :

NTMD6N02R2

Manufacturer
Rochester Electronics
Description
N-CHANNEL POWER MOSFET
Catalog
Transistors - FETs, MOSFETs - Arrays
Availability
21500 pieces
Shipped from
HK warehouse
Expected Shipping Date
Nov 24 - Nov 28 2024
PDF
NTMD6N02R2 PDF
Type Description
Series:-
Package:Bulk
Part Status:Obsolete
FET Type:2 N-Channel (Dual)
FET Feature:Logic Level Gate
Drain to Source Voltage (Vdss):20V
Current - Continuous Drain (Id) @ 25°C:3.92A
Rds On (Max) @ Id, Vgs:35mOhm @ 6A, 4.5V
Vgs(th) (Max) @ Id:1.2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:20nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds:1100pF @ 16V
Power - Max:730mW
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Package / Case:8-SOIC (0.154", 3.90mm Width)
Supplier Device Package:8-SOIC
NTMD6N02R2 is available at GangBo-ic.com, Please review product page below for detailed information, including NTMD6N02R2 price, datasheets, in-stock availability, technical difficulties. Quickly Enter the access of compare list to find replaceable electronic parts. Want to gain comprehensive data for NTMD6N02R2 to optimize the supply chain (include cross references, lifecycle, parametric, counterfeit risk, obsolescence management forecasts), please contact to our Tech-supports team.

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