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FDMS3602S

FDMS3602S

POWER FIELD-EFFECT TRANSISTOR, 1

PESD12VU1UT

PESD12VU1UT

PESD12VU1UT - ULTRA LOW CAPACITA

FDMS3602S

FDMS3602S

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Part No :

FDMS3602S

Manufacturer
Rochester Electronics
Description
POWER FIELD-EFFECT TRANSISTOR, 1
Catalog
Transistors - FETs, MOSFETs - Arrays
Availability
15137 pieces
Shipped from
HK warehouse
Expected Shipping Date
Nov 15 - Nov 19 2024
PDF
FDMS3602S PDF
Type Description
Series:PowerTrench®
Package:Bulk
Part Status:Active
FET Type:2 N-Channel (Dual)
FET Feature:Logic Level Gate
Drain to Source Voltage (Vdss):25V
Current - Continuous Drain (Id) @ 25°C:15A, 26A
Rds On (Max) @ Id, Vgs:5.6mOhm @ 15A, 10V
Vgs(th) (Max) @ Id:3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:27nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds:1680pF @ 13V
Power - Max:1W
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Package / Case:8-PowerTDFN
Supplier Device Package:Power56
FDMS3602S is available at GangBo-ic.com, Please review product page below for detailed information, including FDMS3602S price, datasheets, in-stock availability, technical difficulties. Quickly Enter the access of compare list to find replaceable electronic parts. Want to gain comprehensive data for FDMS3602S to optimize the supply chain (include cross references, lifecycle, parametric, counterfeit risk, obsolescence management forecasts), please contact to our Tech-supports team.

GANG BO INDUSTRIAL CO., LIMITED [Hongkong]

UNIT2, 22/F., RICHMOND COMM. BLDG., 109 ARGYLE STREET, MONGKOK, KOWLOON, HK

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