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VT6M1T2CR

VT6M1T2CR

MOSFET N/P-CH 20V 0.1A VMT6

VT6M1T2CR

VT6M1T2CR

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Part No :

VT6M1T2CR

Manufacturer
ROHM Semiconductor
Description
MOSFET N/P-CH 20V 0.1A VMT6
Catalog
Transistors - FETs, MOSFETs - Arrays
Availability
770477 pieces
Shipped from
HK warehouse
Expected Shipping Date
Nov 28 - Dec 02 2024
PDF
VT6M1T2CR PDF
Type Description
Series:-
Package:Tape & Reel (TR)Cut Tape (CT)
Part Status:Active
FET Type:N and P-Channel
FET Feature:Logic Level Gate, 1.2V Drive
Drain to Source Voltage (Vdss):20V
Current - Continuous Drain (Id) @ 25°C:100mA
Rds On (Max) @ Id, Vgs:3.5Ohm @ 100mA, 4.5V
Vgs(th) (Max) @ Id:1V @ 100µA
Gate Charge (Qg) (Max) @ Vgs:-
Input Capacitance (Ciss) (Max) @ Vds:7.1pF @ 10V
Power - Max:120mW
Operating Temperature:150°C (TJ)
Mounting Type:Surface Mount
Package / Case:6-SMD, Flat Leads
Supplier Device Package:VMT6
VT6M1T2CR is available at GangBo-ic.com, Please review product page below for detailed information, including VT6M1T2CR price, datasheets, in-stock availability, technical difficulties. Quickly Enter the access of compare list to find replaceable electronic parts. Want to gain comprehensive data for VT6M1T2CR to optimize the supply chain (include cross references, lifecycle, parametric, counterfeit risk, obsolescence management forecasts), please contact to our Tech-supports team.

GANG BO INDUSTRIAL CO., LIMITED [Hongkong]

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