GANFET 3 N-CH 100V 9BGA
RF SHIELD 4.5" X 5" SMD T/H
Type | Description |
---|---|
Series: | eGaN® |
Package: | Tape & Reel (TR)Cut Tape (CT) |
Part Status: | Active |
FET Type: | 3 N-Channel (Half Bridge + Synchronous Bootstrap) |
FET Feature: | GaNFET (Gallium Nitride) |
Drain to Source Voltage (Vdss): | 100V |
Current - Continuous Drain (Id) @ 25°C: | 1.7A, 500mA |
Rds On (Max) @ Id, Vgs: | 320mOhm @ 2A, 5V, 3.3Ohm @ 2A, 5V |
Vgs(th) (Max) @ Id: | 2.5V @ 100µA, 2.5V @ 20µA |
Gate Charge (Qg) (Max) @ Vgs: | 0.16nC @ 5V, 0.044nC @ 5V |
Input Capacitance (Ciss) (Max) @ Vds: | 16pF @ 50V, 7pF @ 50V |
Power - Max: | - |
Operating Temperature: | -40°C ~ 150°C (TJ) |
Mounting Type: | Surface Mount |
Package / Case: | 9-VFBGA |
Supplier Device Package: | 9-BGA (1.35x1.35) |
UNIT2, 22/F., RICHMOND COMM. BLDG., 109 ARGYLE STREET, MONGKOK, KOWLOON, HK
Office Hours : Mon-Fri, 9:00-18:30(GMT+8)
Phone: 00852-52612101
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