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EFC6611R-TF

EFC6611R-TF

N-CHANNEL, MOSFET

EFC6611R-TF

EFC6611R-TF

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Part No :

EFC6611R-TF

Manufacturer
Rochester Electronics
Description
N-CHANNEL, MOSFET
Catalog
Transistors - FETs, MOSFETs - Arrays
Availability
74998 pieces
Shipped from
HK warehouse
Expected Shipping Date
Nov 24 - Nov 28 2024
PDF
EFC6611R-TF PDF
Type Description
Series:-
Package:Bulk
Part Status:Active
FET Type:2 N-Channel (Dual) Common Drain
FET Feature:Logic Level Gate, 2.5V Drive
Drain to Source Voltage (Vdss):-
Current - Continuous Drain (Id) @ 25°C:-
Rds On (Max) @ Id, Vgs:-
Vgs(th) (Max) @ Id:-
Gate Charge (Qg) (Max) @ Vgs:100nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds:-
Power - Max:2.5W
Operating Temperature:150°C (TJ)
Mounting Type:Surface Mount
Package / Case:6-SMD, No Lead
Supplier Device Package:6-CSP (1.77x3.54)
EFC6611R-TF is available at GangBo-ic.com, Please review product page below for detailed information, including EFC6611R-TF price, datasheets, in-stock availability, technical difficulties. Quickly Enter the access of compare list to find replaceable electronic parts. Want to gain comprehensive data for EFC6611R-TF to optimize the supply chain (include cross references, lifecycle, parametric, counterfeit risk, obsolescence management forecasts), please contact to our Tech-supports team.

GANG BO INDUSTRIAL CO., LIMITED [Hongkong]

UNIT2, 22/F., RICHMOND COMM. BLDG., 109 ARGYLE STREET, MONGKOK, KOWLOON, HK

Office Hours : Mon-Fri, 9:00-18:30(GMT+8)

[email protected]

Phone: 00852-52612101

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