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NTMFD6H852NLT1G

NTMFD6H852NLT1G

MOSFET N-CH 80V 8DFN

NTMFD6H852NLT1G

NTMFD6H852NLT1G

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Part No :

NTMFD6H852NLT1G

Manufacturer
Sanyo Semiconductor/ON Semiconductor
Description
MOSFET N-CH 80V 8DFN
Catalog
Transistors - FETs, MOSFETs - Arrays
Availability
14500 pieces
Shipped from
HK warehouse
Expected Shipping Date
Sep 26 - Sep 30 2024
Type Description
Series:-
Package:Tape & Reel (TR)
Part Status:Active
FET Type:2 N-Channel (Dual)
FET Feature:-
Drain to Source Voltage (Vdss):80V
Current - Continuous Drain (Id) @ 25°C:295mA
Rds On (Max) @ Id, Vgs:1.6Ohm @ 500mA, 10V
Vgs(th) (Max) @ Id:2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:5nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds:26pF @ 20V
Power - Max:250mW (Ta)
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Surface Mount
Package / Case:8-PowerTDFN
Supplier Device Package:8-DFN (5x6) Dual Flag (SO8FL-Dual)
NTMFD6H852NLT1G is available at GangBo-ic.com, Please review product page below for detailed information, including NTMFD6H852NLT1G price, datasheets, in-stock availability, technical difficulties. Quickly Enter the access of compare list to find replaceable electronic parts. Want to gain comprehensive data for NTMFD6H852NLT1G to optimize the supply chain (include cross references, lifecycle, parametric, counterfeit risk, obsolescence management forecasts), please contact to our Tech-supports team.

GANG BO INDUSTRIAL CO., LIMITED [Hongkong]

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