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SIZ200DT-T1-GE3

SIZ200DT-T1-GE3

MOSFET N-CH DUAL 30V

SIZ200DT-T1-GE3

SIZ200DT-T1-GE3

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Part No :

SIZ200DT-T1-GE3

Manufacturer
Vishay / Siliconix
Description
MOSFET N-CH DUAL 30V
Catalog
Transistors - FETs, MOSFETs - Arrays
Availability
10765 pieces
Shipped from
HK warehouse
Expected Shipping Date
Nov 23 - Nov 27 2024
PDF
SIZ200DT-T1-GE3 PDF
Type Description
Series:TrenchFET® Gen IV
Package:Tape & Reel (TR)Cut Tape (CT)
Part Status:Active
FET Type:2 N-Channel (Dual)
FET Feature:Standard
Drain to Source Voltage (Vdss):30V
Current - Continuous Drain (Id) @ 25°C:22A (Ta), 61A (Tc), 22A (Ta), 60A (Tc)
Rds On (Max) @ Id, Vgs:5.5mOhm @ 10A, 10V, 5.8mOhm @ 10A, 10V
Vgs(th) (Max) @ Id:2.4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:28nC @ 10V, 30nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds:1510pF @ 15V, 1600pF @ 15V
Power - Max:4.3W (Ta), 33W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Package / Case:8-PowerWDFN
Supplier Device Package:8-PowerPair® (3.3x3.3)
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