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NTMD3N08LR2

NTMD3N08LR2

N-CHANNEL POWER MOSFET

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NTMD3N08LR2

NTMD3N08LR2

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Part No :

NTMD3N08LR2

Manufacturer
Rochester Electronics
Description
N-CHANNEL POWER MOSFET
Catalog
Transistors - FETs, MOSFETs - Arrays
Availability
139803 pieces
Shipped from
HK warehouse
Expected Shipping Date
Nov 23 - Nov 27 2024
Type Description
Series:-
Package:Bulk
Part Status:Obsolete
FET Type:2 N-Channel (Dual)
FET Feature:Logic Level Gate
Drain to Source Voltage (Vdss):80V
Current - Continuous Drain (Id) @ 25°C:2.3A
Rds On (Max) @ Id, Vgs:215mOhm @ 2.5A, 10V
Vgs(th) (Max) @ Id:3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:15nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds:480pF @ 25V
Power - Max:3.1W
Operating Temperature:-
Mounting Type:Surface Mount
Package / Case:8-SOIC (0.154", 3.90mm Width)
Supplier Device Package:8-SOIC
NTMD3N08LR2 is available at GangBo-ic.com, Please review product page below for detailed information, including NTMD3N08LR2 price, datasheets, in-stock availability, technical difficulties. Quickly Enter the access of compare list to find replaceable electronic parts. Want to gain comprehensive data for NTMD3N08LR2 to optimize the supply chain (include cross references, lifecycle, parametric, counterfeit risk, obsolescence management forecasts), please contact to our Tech-supports team.

GANG BO INDUSTRIAL CO., LIMITED [Hongkong]

UNIT2, 22/F., RICHMOND COMM. BLDG., 109 ARGYLE STREET, MONGKOK, KOWLOON, HK

Office Hours : Mon-Fri, 9:00-18:30(GMT+8)

[email protected]

Phone: 00852-52612101

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