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NTMFD4C86NT3G

NTMFD4C86NT3G

NTMFD4C86N - POWERPHASE, DUAL N-

NTMFD4C86NT3G

NTMFD4C86NT3G

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Part No :

NTMFD4C86NT3G

Manufacturer
Rochester Electronics
Description
NTMFD4C86N - POWERPHASE, DUAL N-
Catalog
Transistors - FETs, MOSFETs - Arrays
Availability
770000 pieces
Shipped from
HK warehouse
Expected Shipping Date
Nov 26 - Nov 30 2024
PDF
NTMFD4C86NT3G PDF
Type Description
Series:-
Package:Bulk
Part Status:Obsolete
FET Type:2 N-Channel (Dual) Asymmetrical
FET Feature:Standard
Drain to Source Voltage (Vdss):30V
Current - Continuous Drain (Id) @ 25°C:11.3A, 18.1A
Rds On (Max) @ Id, Vgs:5.4mOhm @ 30A, 10V
Vgs(th) (Max) @ Id:2.2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:22.2nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds:1153pF @ 15V
Power - Max:1.1W
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Package / Case:8-PowerTDFN
Supplier Device Package:8-DFN (5x6)
NTMFD4C86NT3G is available at GangBo-ic.com, Please review product page below for detailed information, including NTMFD4C86NT3G price, datasheets, in-stock availability, technical difficulties. Quickly Enter the access of compare list to find replaceable electronic parts. Want to gain comprehensive data for NTMFD4C86NT3G to optimize the supply chain (include cross references, lifecycle, parametric, counterfeit risk, obsolescence management forecasts), please contact to our Tech-supports team.

GANG BO INDUSTRIAL CO., LIMITED [Hongkong]

UNIT2, 22/F., RICHMOND COMM. BLDG., 109 ARGYLE STREET, MONGKOK, KOWLOON, HK

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