PM-MOSFET-SIC-SBD~-SP1F
Type | Description |
---|---|
Series: | - |
Package: | Tube |
Part Status: | Active |
FET Type: | 2 N Channel (Phase Leg) |
FET Feature: | Silicon Carbide (SiC) |
Drain to Source Voltage (Vdss): | 1200V (1.2kV) |
Current - Continuous Drain (Id) @ 25°C: | 55A (Tc) |
Rds On (Max) @ Id, Vgs: | 50mOhm @ 40A, 20V |
Vgs(th) (Max) @ Id: | 2.7V @ 1mA |
Gate Charge (Qg) (Max) @ Vgs: | 137nC @ 20V |
Input Capacitance (Ciss) (Max) @ Vds: | 1990pF @ 1000V |
Power - Max: | 245W (Tc) |
Operating Temperature: | -40°C ~ 175°C (TJ) |
Mounting Type: | Chassis Mount |
Package / Case: | Module |
Supplier Device Package: | SP1F |
UNIT2, 22/F., RICHMOND COMM. BLDG., 109 ARGYLE STREET, MONGKOK, KOWLOON, HK
Office Hours : Mon-Fri, 9:00-18:30(GMT+8)
Phone: 00852-52612101
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