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SQ1912EH-T1_GE3

SQ1912EH-T1_GE3

MOSFET 2 N-CH 20V 800MA SC70-6

SQ1912EH-T1_GE3

SQ1912EH-T1_GE3

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Part No :

SQ1912EH-T1_GE3

Manufacturer
Vishay / Siliconix
Description
MOSFET 2 N-CH 20V 800MA SC70-6
Catalog
Transistors - FETs, MOSFETs - Arrays
Availability
11110 pieces
Shipped from
HK warehouse
Expected Shipping Date
Nov 27 - Dec 01 2024
PDF
SQ1912EH-T1_GE3 PDF
Type Description
Series:Automotive, AEC-Q101, TrenchFET®
Package:Tape & Reel (TR)Cut Tape (CT)
Part Status:Active
FET Type:2 N-Channel (Dual)
FET Feature:Standard
Drain to Source Voltage (Vdss):20V
Current - Continuous Drain (Id) @ 25°C:800mA (Tc)
Rds On (Max) @ Id, Vgs:280mOhm @ 1.2A, 4.5V
Vgs(th) (Max) @ Id:1.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:1.15nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds:75pF @ 10V
Power - Max:1.5W
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Surface Mount
Package / Case:6-TSSOP, SC-88, SOT-363
Supplier Device Package:SC-70-6
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