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AUIRF9952QTR

AUIRF9952QTR

AUIRF9952 HEXFET POWER MOSFET

AUIRF9952QTR

AUIRF9952QTR

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Part No :

AUIRF9952QTR

Manufacturer
Rochester Electronics
Description
AUIRF9952 HEXFET POWER MOSFET
Catalog
Transistors - FETs, MOSFETs - Arrays
Availability
44000 pieces
Shipped from
HK warehouse
Expected Shipping Date
Nov 23 - Nov 27 2024
PDF
AUIRF9952QTR PDF
Type Description
Series:HEXFET®
Package:Bulk
Part Status:Active
FET Type:N and P-Channel
FET Feature:Logic Level Gate
Drain to Source Voltage (Vdss):30V
Current - Continuous Drain (Id) @ 25°C:3.5A, 2.3A
Rds On (Max) @ Id, Vgs:100mOhm @ 2.2A, 10V
Vgs(th) (Max) @ Id:3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:14nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds:190pF @ 15V
Power - Max:2W
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Package / Case:8-SOIC (0.154", 3.90mm Width)
Supplier Device Package:8-SO
AUIRF9952QTR is available at GangBo-ic.com, Please review product page below for detailed information, including AUIRF9952QTR price, datasheets, in-stock availability, technical difficulties. Quickly Enter the access of compare list to find replaceable electronic parts. Want to gain comprehensive data for AUIRF9952QTR to optimize the supply chain (include cross references, lifecycle, parametric, counterfeit risk, obsolescence management forecasts), please contact to our Tech-supports team.

GANG BO INDUSTRIAL CO., LIMITED [Hongkong]

UNIT2, 22/F., RICHMOND COMM. BLDG., 109 ARGYLE STREET, MONGKOK, KOWLOON, HK

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